Hot carrier degradation and ESD in submicrometer CMOS technologies: How do they interact?GROESENEKEN, Guido V.IEEE transactions on device and materials reliability. 2001, Vol 1, Num 1, pp 23-32, issn 1530-4388, 10 p.Article

Infos 2005: Proceedings of the 14th Biennal Conference on Insulating Films on Semiconductors, June 22-24, 2005, Leuven, BelgiumGROESENEKEN, Guido; KACZER, Ben.Microelectronic engineering. 2005, Vol 80, issn 0167-9317, 491 p.Conference Proceedings

Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistorSELS, Dries; SOREE, Bart; GROESENEKEN, Guido et al.Journal of computational electronics (Print). 2011, Vol 10, Num 1-2, pp 216-221, issn 1569-8025, 6 p.Article

Innovative technologies for high density non-volatile semiconductor memoriesBEZ, Roberto.Microelectronic engineering. 2005, Vol 80, pp 249-255, issn 0167-9317, 7 p.Conference Paper

Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specificationsDEGRAEVE, Robin; KACZER, Ben; DE KEERSGIETER, An et al.IEEE transactions on device and materials reliability. 2001, Vol 1, Num 3, pp 163-169, issn 1530-4388, 7 p.Article

MOSFET ESD breakdown modeling and parameter extraction in advanced CMOS technologiesVASSILEV, Vesselin; LORENZINI, Martino; GROESENEKEN, Guido et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2108-2117, issn 0018-9383, 10 p.Article

Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectricsGIUSI, Gino; CRUPI, Felice; PACE, Calogero et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 4, pp 823-828, issn 0018-9383, 6 p.Article

Point defects in HfO₂ high K gate oxideXIONG, K; ROBERTSON, J.Microelectronic engineering. 2005, Vol 80, pp 408-411, issn 0167-9317, 4 p.Conference Paper

A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimesCRUPI, Felice; KACZER, Ben; DEGRAEVE, Robin et al.IEEE transactions on device and materials reliability. 2003, Vol 3, Num 1, pp 8-13, issn 1530-4388, 6 p.Article

Scaling CMOS: Finding the gate stack with the lowest leakage currentKAUERAUF, Thomas; GOVOREANU, Bogdan; DEGRAEVE, Robin et al.Solid-state electronics. 2005, Vol 49, Num 5, pp 695-701, issn 0038-1101, 7 p.Article

Infrared properties of ultrathin oxides on Si(100)GIUSTINO, Feliciano; PASQUARELLO, Alfredo.Microelectronic engineering. 2005, Vol 80, pp 420-423, issn 0167-9317, 4 p.Conference Paper

A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectricsCRUPI, Felice; KAUERAUF, Thomas; DEGRAEVE, Robin et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 8, pp 1759-1765, issn 0018-9383, 7 p.Article

Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO₂ and GeO_x(N_y) insulators probed by electron spin resonanceSTESMANS, A; AFANAS'EV, V. V.Microelectronic engineering. 2005, Vol 80, pp 22-25, issn 0167-9317, 4 p.Conference Paper

Performance and new effects in advanced SOI devices and materialsBALESTRA, Francis; JOMAAH, Jalal.Microelectronic engineering. 2005, Vol 80, pp 230-240, issn 0167-9317, 11 p.Conference Paper

Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxidesHIRAIWA, A; ISHIKAWA, D.Microelectronic engineering. 2005, Vol 80, pp 374-377, issn 0167-9317, 4 p.Conference Paper

Ab initio study of charged states of H in amorphous SiO₂GODET, Julien; PASQUARELLO, Alfredo.Microelectronic engineering. 2005, Vol 80, pp 288-291, issn 0167-9317, 4 p.Conference Paper

A New TDDB Reliability Prediction Methodology Accounting for Multiple SBD and Wear OutSAHHAF, Sahar; DEGRAEVE, Robin; ROUSSEL, Philippe J et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 7, pp 1424-1432, issn 0018-9383, 9 p.Article

Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)TROJMAN, Lionel; PANTISANO, Luigi; FERAIN, Isabelle et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 12, pp 3414-3420, issn 0018-9383, 7 p.Article

Abmpt model interface for the 4H(1000)SiC-SiO₂ interfaceDEVYNCK, Fabien; GIUSTINO, Feliciano; PASQUARELLO, Alfredo et al.Microelectronic engineering. 2005, Vol 80, pp 38-41, issn 0167-9317, 4 p.Conference Paper

Impact of A1 incorporation in hafnia on interface states in (100)Si/HfAl_xO_yFEDORENKO, Y. G; AFANAS'EV, V. V; STESMANS, A et al.Microelectronic engineering. 2005, Vol 80, pp 66-69, issn 0167-9317, 4 p.Conference Paper

Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxideGERARDIN, S; CESTER, A; PACCAENELLA, A et al.Microelectronic engineering. 2005, Vol 80, pp 178-181, issn 0167-9317, 4 p.Conference Paper

Improved NBTI Reliability With Sub-1-Nanometer EOT ZrO₂ Gate Dielectric Compared With HfO₂CHO, Moonju; KACZER, Ben; KAUERAUF, Thomas et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 593-595, issn 0741-3106, 3 p.Article

Repair and capping of porous MSQ films using chlorosilanes and supercritical CO₂XIE, B; CHOATE, L; MUSCAT, A. J et al.Microelectronic engineering. 2005, Vol 80, pp 349-352, issn 0167-9317, 4 p.Conference Paper

Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectricsROUSSEL, Philippe J; DEGRAEVE, Robin; VAN DEN BOSCH, Geert et al.IEEE transactions on device and materials reliability. 2001, Vol 1, Num 2, pp 120-127, issn 1530-4388, 8 p.Article

Voltage-based fault path tracing by transistor operating point analysisSANADA, Masaru.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1533-1538, issn 0026-2714, 6 p.Conference Paper